FGA25N120ANTDTU Datasheet, IGBT, ON Semiconductor

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FGA25N120ANTDTU Features and benefits

* NPT Trench Technology, Positive Temperature Coefficient
* Low Saturation Voltage: VCE(sat), typ = 2.0 V @ IC = 25 A and TC = 25°C
* Low Switching Loss: Eoff.

FGA25N120ANTDTU Application

* Induction Heating, Microwave Oven Description Using ON Semiconductor's proprietary trench design and advanced NPT.

FGA25N120ANTDTU Description

Using ON Semiconductor's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device is well suited for the reso-n.

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